High quantum efficiency GaP avalanche photodiodes

Modelling of High Quantum Efficiency Avalanche Photodiode

A model of a low noise high quantum efficiency n+np Germanium Photodiode utilizing ion implantation technique and subsequent drive-in diffusion in the n layer is presented. Numerical analysis is used to study the influence of junction depth and bulk concentration on the electric field profile and quantum efficiency. The performance of the device is theoretically treated especially at the wave-l...

Avalanche Photodiodes in High-Speed Receiver Systems

The avalanche photodiode (APD) is widely used in optical fibre communications (Campbell, 2007) due to its ability to achieve high internal gain at relatively high speeds and low excess noise (Wei et al., 2002), thus improving the system signal-to-noise ratio. Its internal mechanism of gain or avalanche multiplication is a result of successive impact ionisation events. In an optical receiver sys...

High Performance Ultraviolet 4H-SiC Avalanche Photodiodes

Solar-blind avalanche photodiodes

There is a need for semiconductor based UV photodetectors to support avalanche gain in order to realize better performance and more effectively compete with existing photomultiplier tubes. However, there are numerous technical issues associated with the realization of high-quality solar-blind avalanche photodiodes (APDs). In this paper, APDs operating at 280 nm, within the solar-blind region of...

Quantum-dot based avalanche photodiodes for mid-infrared sensing

A mid-infrared sensor is proposed in which an intersubband quantum-dot (QD) detector is integrated with an avalanche photodiode (APD) through a tunnel barrier. In the proposed three-terminal device, the applied biases of the QD and the APD are controlled separately; this feature permits the control of the QD’s responsivity and dark current independently of the operational gain of the APD. It is...